The semiconductor industry forecasts a doubling of the performances of electronic components every 18 months. However, the current printing technology - lithography – has to address the physical constraints of ever-greater miniaturization of silicon chips. CEA-Leti and Arkema, in association with LCPO (Laboratoire de Chimie des Polymères Organiques) of Bordeaux, have succeeded in going beyond the boundaries of the infinitely small by showing the unique resolution potential of lithography based on nanostructured polymers. These initial results meet the requirements of the next 4 generations of electronic chips. Building on this success, CEA-Leti and Arkema have created a development platform dedicated to this technology.

The latest addition to CEA-Leti’s extensive range of collaboration offers on 200mm and 300mm Platforms

Leti and IPDiA are proud to unveil a new worldwide record in capacitance density.

CEA-Leti and IPDiA report to overcome a crucial step toward market deployment of a new generation of 3D high-density capacitor achieving 550nF/mm2.

It incorporates a hybrid tunable laser on silicon

CEA-Leti and III-V lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA Leti, today announced that they have demonstrated an integrated tunable transmitter on silicon. For the first time, a tunable laser source has been integrated on silicon, which represents a key milestone towards fully integrated transceivers.

CEA-Leti, coordinator of the European HELIOS project to accelerate commercialization of silicon photonics, unveiled a 40Gbit/s optical modulator in silicon with a record extinction ratio of 10dB developed by the HELIOS Project members. In an effort to push forward this state-of-the art technique, an ultra-high speed optical modulator enhanced via “slow light” propagation has now been demonstrated. Slow light propagation is referred to when light travels significantly slower in a modulator than it does through air or in a vacuum.