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Future Nanoelectronics: the CEA-LETI, IBM and STMICROELECTRONICS COOPERATION
Early in 2009, CEA-Leti joined IBM’s semiconductor Joint Development Alliance ecosystem. CEA-Léti reinforces the alliance by bringing its specific skills in CMOS low-consumption technology, e-beam lithography and nanoscale characterization.
The IBM-CEA/Leti collaboration will focus on three areas:
- Advanced lithography for quick prototyping and for 22nm technology
- CMOS technologies and low-power devices for 22nm chip technology and beyond
- Technology enablement, including innovative nanoscale characterization techniques for research and for monitoring manufacturing protocols.
The research work is run jointly on the CEA-Leti 300mm silicon platform in Grenoble, in the College of Nanoscale Science and Engineering at Albany University in New York, at STMicroelectronics’ site in Crolles and in IBM`s 300mm fab in East Fishkill, N.Y.
« Partnerships between the research teams, whether they are public or private, really help projects to move forward. They allow research results to be transformed more quickly into profits and to improve our everyday lives », says Daniel Chaffraix, Chairman of IBM France.
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