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> RF and Antenna ComponentsRF and Antenna Components
Contact: François Perruchot (francois.perruchot@cea.fr)
A system-level approach for new applications
In recent years, we have become accustomed to using RF wireless technology for telephone calls, Internet access and navigation. Going forward, RF will be a basic enabling technology for multiple applications, from high-speed data transmission to networks of tiny autonomous sensors and in-body therapeutic devices.
Multi-disciplinary teams of Leti researchers are taking a unique system-level approach to implementing next-generation RF solutions:
One major initiative involves the use of MEMS devices to perform RF functions that have traditionally been handled by discrete analog electronics, which are bulky, expensive, and/or difficult to design.
Close collaboration with specific RF design teams has allowed Leti to propose innovative architectures. We focus specifically on numerous key components of the RF frontend, including antennas that are developed following both a co-design approach and micro-engineered meta-material design.
Costs can be cut, space saved, and performance enhanced by moving functions like switching, filtering, and passive components into silicon-based MEMS.
Advances from new ideas and collaboration
In 2008, we demonstrated a new MEMS-based approach to bulk acoustic wave (BAW) components that uses acoustical coupling to combine resonators in CRF filters.
-Leti and Freescale demonstrated a state-of-the-art 200mm PZT actuator fully compatible with industrial specifications (low-voltage actuation specially needed for RF switches in mobile phone applications).
As an example of co-design, teams combined a dedicated broadband amplifier with a GHz spintronic oscillator to propose a solution for RF oscillators with a unique tuning range of 2 to 15 GHz.
Leti and Aviza Technology have signed a JDP that will provide Leti with the world’s first 300mm ion-beam deposition system compatible with spintronic requirements. This equipment will be a key step to speed up the development of new RF components (see preceding example).
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