Leti, innovation
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Contact: Jean-Jacques Aubert (jean-jacques.aubert@cea.fr)
Improving performance and lowering costs through material innovation
For several years, Leti has been involved in the development of advanced CMOS gate materials in order to improve transistor performance through better gate current and less power consumption. In 2008, we replaced the classic polysilicon-oxinitride gate stack with High-k/metal gate stacks.
Despite optimizations on refractory metal nitride, this new architecture reveals a significant degradation of mobility and reliability.
Leti, in collaboration with various industrial partners, identified the cause of these problems: nitrogen in the metal diffuses at the High-k/metal interface during the different furnace processes.
Leti solved these problems by presenting a range of products: the new High-k material associated with metal gates has obtained an EOT value less than 1nm. We continue to optimize advanced High-k/metal gate stack to address both aggressive EOT and reliability for future technology generations.
Nanowires and CMOS Circuits: towards technology transfer
Potential nanowire applications range from electronics to optics, biology, and energy, but the field is still mainly restricted to basic science.
The major bottleneck to transferring nanowires to industry is the lack of a CMOS-compatible process catalog. In 2008, Leti demonstrated that fully CMOS-compatible silicon nanowires growth is possible.
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